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this is information on a product in full production. april 2013 docid023157 rev 2 1/13 13 STW60NM50N n-channel 500 v, 0.035 , 68 a, mdmesh? ii power mosfet in a to-247 package datasheet - production data figure 1. internal schematic diagram features ? 100% avalanche tested ? low input capacitance and gate charge ? low gate input resistance applications ? switching applications description this device is an n-channel power mosfet developed using the second generation of mdmesh? technology. this revolutionary power mosfet associates a vertical structure to the company?s strip layout to yield one of the world?s lowest on-resistance and gate charge. it is therefore suitable for the most demanding high efficiency converters. 1 2 3 to-247 $0y ' * 6 order code v dss (@t jmax )r ds(on) max i d STW60NM50N 550 v <0.043 68 a table 1. device summary order codes marking packages packaging STW60NM50N 60nm50n to-247 tube www.st.com
contents STW60NM50N 2/13 docid023157 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
docid023157 rev 2 3/13 STW60NM50N electrical ratings 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v gs gate- source voltage 25 v i d drain current (continuous) at t c = 25 c 68 a i d drain current (continuous) at t c = 100 c 43 a i dm (1) 1. pulse width limited by safe operating area. drain current (pulsed) 272 a p tot total dissipation at t c = 25 c 446 w dv/dt (2) 2. i sd 68 a, di/dt 400 a/s, v dd =80% v (br)dss peak diode recovery voltage slope 15 v/ns t stg storage temperature ?55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 0.28 c/w r thj-amb thermal resistance junction-ambient max 50 c/w table 4. avalanche characteristics symbol parameter value unit i as avalanche current, repetitive or not-repetitive (pulse width limited by t j max ) 11 a e as single pulse avalanche energy (starting tj=25 c, i d =i as , v dd =50 v) 551 mj
electrical characteristics STW60NM50N 4/13 docid023157 rev 2 2 electrical characteristics (t case =25 c unless otherwise specified) table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage v gs = 0, i d = 1 ma 500 v i dss zero gate voltage drain current v gs = 0, v ds = 500 v v gs = 0, v ds = 500 v, t j = 125 c 1 100 a i gss gate-body leakage current v ds = 0, v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 34 a 0.035 0.043 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 100 v, f = 1 mhz, v gs = 0 -5790 - pf c oss output capacitance - 365 - pf c rss reverse transfer capacitance -14 -pf c oss eq. (1) 1. c oss eq. is defined as a constant equivalent capac itance giving the same charging time as c oss when v ds increases from 0 to 80% v ds equivalent output capacitance v gs = 0 v, v ds = 0v to 480 v - 1008 - pf q g total gate charge v dd = 480 v, i d = 68 a, v gs = 10 v (see figure 14) -178 -nc q gs gate-source charge - 28 - nc q gd gate-drain charge - 95 - nc r g gate input resistance f=1 mhz gate dc bias=0 test signal level = 20 mv open drain -2 -
docid023157 rev 2 5/13 STW60NM50N electrical characteristics table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd =300 v, i d = 32.5 a r g =4.7 v gs = 10 v (see figure 13) -206- ns t r rise time - 36 - ns t d(off) turn-off delay time - 40 - ns t f fall time - 27.5 - ns table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current source-drain current (pulsed) -68a i sdm (1) 1. pulse width limited by safe operating area. source-drain current (pulsed) - 272 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 68 a, v gs = 0 - 1.6 v t rr reverse recovery time i sd = 68 a, di/dt = 100 a/s v dd = 100 v (see figure 15) -476 ns q rr reverse recovery charge - 10.5 nc i rrm reverse recovery current - 44 a t rr reverse recovery time i sd = 68 a, di/dt = 100 a/s v dd = 100 v, t j = 150 c (see figure 15) -586 ns q rr reverse recovery charge - 15 nc i rrm reverse recovery current - 51 a
electrical characteristics STW60NM50N 6/13 docid023157 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance i d 10 1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10ms 1ms 0.1 tj=150c tc=25c single pulse 100 s 10s am15736v1 10 -4 10 -3 10 -2 10 -1 t p (s) 10 -2 10 -1 k 0.2 0.05 0.02 0.01 0.1 single pulse =0.5 zth=k rthj-c =tp/ tp am09125v1 figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized v (br)dss vs temperature figure 7. static drain-source on-resistance i d 60 40 20 0 0 10 v ds (v) (a) 5 15 80 4v 5v 6v v gs =7, 8, 9, 10v 20 100 am15737v1 i d 20 0 0 4 v gs (v) 8 (a) 2 6 40 60 v ds =19v 80 100 am15738v1 v ds -50 0 t j (c) (norm) -25 75 25 50 100 0.92 0.94 0.96 0.98 1.00 1.02 1.04 1.06 i d =1ma 1.08 1.10 am09028v1 r ds(on) 0 10 i d (a) ( ) 20 v gs =10v 30 40 50 60 0.032 0.032 0.033 0.033 0.034 0.034 0.035 0.035 am15739v1
docid023157 rev 2 7/13 STW60NM50N electrical characteristics figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs temperature figure 12. source-drain diode forward characteristics v gs 6 4 2 0 0 q g (nc) (v) 100 8 50 10 v dd =400v 150 100 20 0 200 v ds 150 200 250 v ds (v) i d =68a 12 300 350 am15740v1 c 100 10 1 0.1 10 v ds (v) (pf) 1 100 ciss coss crss 1000 10000 am15741v1 v gs(th) 0.85 0.80 0.75 0.70 t j (c) (norm) -50 0.90 i d =250a -25 0 25 0.95 50 75 100 125 0.95 1.00 1.05 am15742v1 r ds(on) t j (c) (norm) i d =34 a -50 -25 0 25 50 75 100 125 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 am15743v1 v sd 0 i sd (a) (v) 10 40 20 30 0 0.2 0.4 0.6 t j =-50c t j =150c t j =25c 0.8 1 50 60 1.2 1.4 am15744v1
test circuits STW60NM50N 8/13 docid023157 rev 2 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive waveform figure 18. switching time waveform
docid023157 rev 2 9/13 STW60NM50N package mechanical data 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data STW60NM50N 10/13 docid023157 rev 2 table 9. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
docid023157 rev 2 11/13 STW60NM50N package mechanical data figure 19. to-247 drawing 0075325_g
revision history STW60NM50N 12/13 docid023157 rev 2 5 revision history table 10. document revision history date revision changes 26-apr-2012 1 first release. 16-apr-2013 2 ? inserted: section 2.1: electrical characteristics (curves) ? modified: i as value on table 4 ? minor text changes
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